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direct rdram ? K4R571669D/k4r881869d page -1 version 1.4 july 2002 july 2002 version 1.4 direct rdram tm 512k x 16/18bit x 32s banks 256/288mbit rdram ? (d-die)
direct rdram ? K4R571669D/k4r881869d page 0 version 1.4 july 2002 change history version 1.4( july 2002) - first copy ( version 1.4 is named to unify the version of component and device operation datasheets) - based on the 256/288mb a-die rdram ? version 1.4
direct rdram ? K4R571669D/k4r881869d page 1 version 1.4 july 2002 overview the rdram ? device is a gene ral purpose high-perfor- mance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. the 256/288-mbit rdram devices are extremely high- speed cmos drams organized as 16m words by 16 or 18 bits. the use of rambus signaling le vel (rsl) technology permits up to 1066 mhz transfer rates while using conven- tional system and board de sign technologies. rdram devices are capable of sustaine d data transfers up to 0.938ns per two bytes (7.5ns per sixteen bytes). the architecture of rdram devices allows the highest sustained bandwidth for multi ple, simultaneous randomly addressed memory transactions . the separate control and data buses with independent row and column control yield over 95% bus efficiency. th e rdram device's 32 banks support up to four simult aneous transactions. system oriented features fo r mobile, graphics and large memory systems include power management, byte masking, and x18 organization. the two da ta bits in the x18 organiza- tion are general and can be us ed for additional storage and bandwidth or for error correction. features ? highest sustained bandw idth per dram device - 2.1gb/s sustained data transfer rate - separate control and data buses for maximized efficiency - separate row and column control buses for easy scheduling and highest performance - 32 banks: four transacti ons can take place simul- taneously at full bandwidth data rates ? low latency features - write buffer to reduce read latency - 3 precharge mechanisms for controller flexibility - interleaved transactions ? advanced power management: - multiple low power states allows flexibility in power consumption versus time to transition to active state - power-down self-refresh ? organization: 2kbyte pages and 32 banks, x 16/18 - x18 organization allows ecc configurations or increased storage/bandwidth - x16 organization for lo w cost applications ? uses rambus signa ling level (rsl) for up to 1066mhz operation the 256/288-mbit rdram devices are offered in a csp horizontal package suitable for desktop as well as low- profile add-in card a nd mobile applications. key timing parameters/part numbers a. ? 32s ? - 32 banks which use a ? split ? bank architecture . b. ? f ? - wbga package. c. ? c ? - rdram core uses normal power self refresh. figure 1: direct rdram csp package organization speed part number bin i/o freq. mhz t rac (row access time) ns 512kx16x32s a -ct9 1066 32p K4R571669D-f b c c t9 -cn9 1066 32 K4R571669D-fcn9 -cm9 1066 35 K4R571669D-fcm9 -cm8 800 40 K4R571669D-fcm8 -ck8 800 45 K4R571669D-fck8 512kx18x32s -ct9 1066 32p k4r881869d-fct9 -cn9 1066 32 k4r881869d-fcn9 -cm9 1066 35 k4r881869d-fcm9 -cm8 800 40 k4r881869d-fcm8 -ck8 800 45 k4r881869d-fck8 k4rxxxx69d- f xxx samsung 230
direct rdram ? K4R571669D/k4r881869d page 2 version 1.4 july 2002 col row pinouts and definitions center-bonded devices these tables shows the pin a ssignments of the center-bonded rdram package. the mechanical dimensions of this package are shown in a later section. refer to section ? center-bonded wbga package ? on page 18. note - pin #1 is at the a1 position. table 1: center-bonded device (top view) 10 v dd gnd v dd gnd v dd v dd v dd v dd gnd v dd 9 8 gnd v dd cmd v dd gnd gnda gnda v dd v dd gnd gnd v dd v dd gnd gnd v cmos v dd gnd 7 v dd dqa8 dqa7 dqa5 dqa3 dqa1 ctmn ctm rq7 rq5 rq3 rq1 dqb1 dqb3 dqb5 dqb7 dqb8 v dd 6 5 4 gnd gnd dqa6 dqa4 dqa2 dqa0 cfm cfmn rq6 rq4 rq2 rq0 dqb0 dqb2 dqb4 dqb6 gnd gnd 3 v dd gnd sck v cmos gnd v dd gnd v dda v ref gnd v dd gnd gnd v dd sio0 sio1 gnd v dd 2 1 v dd gnd gnd v dd gnd gnd gnd gnd gnd v dd a b c d e f g h j k l m n p r s t u chip top view the pin #1(row 1, col a) is located at the a1 position on the top side and the a1 position is marked by the marker ? ? . k4rxxxx69d- f xxx samsung 230
direct rdram ? K4R571669D/k4r881869d page 3 version 1.4 july 2002 table 2: pin description signal i/o type # pins center description sio1,sio0 i/o cmos a 2 serial input/output. pins for reading from and writing to the control regis- ters using a serial access protoc ol. also used for power management. cmd i cmos a 1 command input. pins used in conjunc tion with sio0 and sio1 for reading from and writing to the control r egisters. also used for power manage- ment. sck i cmos a 1 serial clock input. clock source us ed for reading from and writing to the control registers v dd 24 supply voltage for the rdram core and interface logic. v dda 1 supply voltage for the rdram analog circuitry. v cmos 2 supply voltage for cmos input/output pins. gnd 28 ground reference for rdram core and interface. gnda 2 ground reference for rdram analog circuitry. dqa8..dqa0 i/o rsl b 9 data byte a. nine pins which carry a byte of read or write data between the channel and the rdram device. dq a8 is not used (no connection) by rdram device with a x16 organization. cfm i rsl b 1 clock from master. interface clock used for receiving rsl signals from the channel. positive polarity. cfmn i rsl b 1 clock from master. interface clock used for receiving rsl signals from the channel. negative polarity v ref 1 logic threshold reference voltage for rsl signals ctmn i rsl b 1 clock to master. interface clock used for transmitting rsl signals to the channel. negative polarity. ctm i rsl b 1 clock to master. interface clock used for transmitting rsl signals to the channel. positive polarity. rq7..rq5 or row2..row0 irsl b 3 row access control. three pins c ontaining control and address informa- tion for row accesses. rq4..rq0 or col4..col0 irsl b 5 column access control. five pins containing control and address informa- tion for column accesses. dqb8.. dqb0 i/o rsl b 9 data byte b. nine pins which carry a byte of read or write data between the channel and the rdram device. dq b8 is not used (no connection) by rdram device with a x16 organization. total pin count per package 92 a. all cmos signals are high-true; a high voltage is a logic one and a low voltage is logic zero. b. all rsl signals are low-true; a low voltage is a logic one and a high voltage is logic zero.
direct rdram ? K4R571669D/k4r881869d page 4 version 1.4 july 2002 figure 2: 256/288-mbit (512kx16/ 18x32s) rdram device block diagram bank 31 dqa8..dqa0 1:8 demux 8:1 mux write buffer 1:8 demux write buffer 8:1 mux bank 30 bank 29 bank 18 bank 17 bank 16 bank 15 bank 14 bank 13 bank 1 bank 0 samp 1/2 dqb8..dqb0 9 1:8 demux 1:8 demux packet decode 9 5 3 row2..row0 col4..col0 ctm ctmn cfm cfmn 2 sck,cmd rclk tclk control registers dc cop c bc ma mb dx xop bx dr r rop br 8 8 7 5 5 5 5 5 6 9 5 5 11 av m s write buffer match match mux match devid 512x128x144 internal dqb data path column decode & mask 72 9 9 72 9 dm refr row decode mux act rd, wr power modes dram core mux xop decode prex prec 9 9 9 9 72 9 9 9 prer colx colc colm 2 sio0,sio1 sense amp internal dqa data path packet decode rowa rowr rclk rclk rclk tclk rclk tclk r q 7..r q 5 or rq4..rq0 or samp 0/1 samp 0 samp 14/15 samp 15 samp 13/14 samp 16/17 samp 17/18 samp 16 samp 29/30 samp 30/31 samp 31 64x72 samp 1/2 72 samp 0/1 samp 0 samp 14/15 samp 15 samp 13/14 samp 16/17 samp 17/18 samp 16 samp 29/30 samp 30/31 samp 31 64x72 64x72 bank 2 ??? ??? ??? ??? ??? ???
direct rdram ? K4R571669D/k4r881869d page 5 version 1.4 july 2002 general description figure 2 is a block diagra m of the 256/288-mbit rdram device. it consists of two major blocks: a ? core ? block built from banks and sense amps sim ilar to those found in other types of dram, and a direct rambus tm interface block which permits an external controller to access this core at up to 2.1gb/s. control registers: the cmd, sck, sio0, and sio1 pins appear in the upper center of figure 2. they are used to write and read a block of cont rol registers. these registers supply the rdram configuration information to a controller and they select th e operating modes of the device. the refr value is used for tracking the last refreshed row. most importantly, the five bit devid specifies the device address of the rdram device on the channel. clocking: the ctm and ctmn pi ns (clock-to-master) generate tclk (transmit clock), the internal clock used to transmit read data. the cfm and cfmn pins (clock-from- master) generate rcl k (receive clock), the internal clock signal used to receive write da ta and to receive the row and col pins. dqa,dqb pins: these 16/18 pins carry read (q) and write (d) data across the channel. they are multiplexed/de- multiplexed from/to two 64/72-bit data paths (running at one-eighth the data freque ncy) inside the rdram. banks: the 32mbyte core of the rdram device is divided into thirty two 1mbyt e banks, each organized as 512 rows, with each row contai ning 128 dualocts, and each dualoct containing 16/18 bytes. a dualoct is the smallest unit of data that can be addressed. sense amps: the rdram device contains 34 sense amps. each sense amp consists of 1kbyte of fast storage (512 bytes for dqa and 512 bytes for dqb) and can hold one- half of one row of one ba nk of the rdram device. the sense amp may hold any of the 1024 half-rows of an associ- ated bank. however, each sens e amp is shared between two adjacent banks of the rdra m device (except for sense amps 0, 15, 16, and 31). this introduces the restriction that adjacent banks may not be simultaneously accessed. rq pins: these pins carry cont rol and address informa- tion. they are broken into two groups. rq7..rq5 are also called row2..row0, and are us ed primarily for controlling row accesses. rq4..rq0 are also called col4..col0, and are used primarily for controlling column accesses. row pins: the principle use of these three pins is to manage the transfer of data between the banks and the sense amps of the rdram device. th ese pins are de-multiplexed into a 24-bit rowa (row-activate) or rowr (row-opera- tion) packet. col pins: the principle use of th ese five pins is to manage the transfer of data between the dqa/dqb pins and the sense amps of the rdram device. these pins are de- multiplexed into a 23-bit colc (column-operation) packet and either a 17-bit colm (mas k) packet or a 17-bit colx (extended-opera tion) packet. act command: an act (activate) command from an rowa packet causes one of the 512 rows of the selected bank to be loaded to its as sociated sense amps (two 512 bytes sense amps for dqa and two for dqb). prer command: a prer (precharge) command from an rowr packet causes the selected bank to release its two associated sense amps, permitting a different row in that bank to be activated, or permi tting adjacent banks to be acti- vated. rd command: the rd (read) command causes one of the 128 dualocts of one of the se nse amps to be transmitted on the dqa/dqb pins of the channel. wr command: the wr (write) command causes a dualoct received from the dqa/dqb data pins of the channel to be loaded into the write buffer. there is also space in the write buffer for the bc bank address and c column address information. the data in the write buffer is automatically retired (written with optional bytemask) to one of the 128 dualocts of one of the sense amps during a subse- quent cop command. a retire can take place during a rd, wr, or nocop to another device, or during a wr or nocop to the same device. the write buffer will not retire during a rd to the same device . the write buffer reduces the delay needed for the internal dqa/dqb data path turn- around. prec precharge: the prec, rda and wra commands are similar to nocop, rd and wr, except that a precharge operation is performed at the end of the column operation. these commands provide a second mechanism for performing precharge. prex precharge: after a rd command, or after a wr command with no byte masking (m =0), a colx packet may be used to specify an exte nded operation (xop). the most important xop command is prex. this command provides a third mechanism for performing precharge.
direct rdram ? K4R571669D/k4r881869d page 6 version 1.4 july 2002 packet format figure 3 shows the formats of the rowa and rowr packets on the row pins. table 3 describes the fields which comprise these packets. dr4t and dr4f bits are encoded to contain both the dr4 device address bit and a framing bit which allows the rowa or ro wr packet to be recognized by the rdram device. the av (rowa/rowr packet se lection) bit distinguishes between the two packet types. both the rowa and rowr packet provide a five bit devi ce address and a five bit bank address. an rowa packet uses the remaining bits to specify a nine bit row address, and the rowr packet uses the remaining bits for an eleven b it opcode field. note the use of the ? rsvx ? notation to reserve bits for future address field extension. figure 3 also shows the formats of the colc, colm, and colx packets on the col pins. table 4 describes the fields which comprise these packets. the colc packet uses the s (start) bit for framing. a colm or colx packet is ali gned with this colc packet, and is also framed by the s bit. the 23 bit colc packet has a five bit device address, a five bit bank address, a seven bit co lumn address, and a four bit opcode. the colc packet sp ecifies a read or write command, as well as some power management commands. the remaining 17 bits are inte rpreted as a colm (m=1) or colx (m=0) packet. a colm pa cket is used for a colc write command which needs byt emask control. the colm packet is associated with the colc packet from at least t rtr earlier. a colx packet may be used to specify an indepen- dent precharge command. it contains a five bit device address, a five bit bank addre ss, and a five bit opcode. the colx packet may also be used to specify some house- keeping and power manageme nt commands. the colx packet is framed within a colc packet but is not otherwise associated with any other packet. table 3: field description for rowa packet and rowr packet field description dr4t,dr4f bits for framing (recognizing) a rowa or rowr packet. also encodes highest device address bit. dr3..dr0 device address for rowa or rowr packet. br4..br0 bank address for rowa or rowr p acket. rsvb denotes bi ts ignored by the rdram device . av selects between rowa packet (a v=1) and rowr packet (av=0). r8..r0 row address for rowa packet. rsvr denotes bits ignored by the rdram device . rop10..rop0 opcode field for rowr packet. specifies precharge, refresh, and power management functions. table 4: field description for colc packet, colm packet, and colx packet field description s bit for framing (recognizing) a colc packet, and indirectly for framing colm and colx packets. dc4..dc0 device addres s for colc packet. bc4..bc0 bank address for colc packet. rs vb denotes bits reserved for future extension (controller drives 0 ? s). c6..c0 column address for colc packet. rsvc denotes bits ignored by the rdram device . cop3..cop0 opcode field for colc packet. specifi es read, write, precharge, and power management functions. m selects between colm packet (m=1) and colx packet (m=0). ma7..ma0 bytemask write control bits. 1=write, 0=no-write. ma0 controls the earliest byte on dqa8..0. mb7..mb0 bytemask write control bits. 1=write, 0=no-write. mb0 controls the earliest byte on dqb8..0. dx4..dx0 device addres s for colx packet. bx4..bx0 bank address for colx packet. rsvb denotes bits reserved for future extension (c ontroller drives 0? s). xop4..xop0 opcode fiel d for colx packet. specifies precharge, i ol control, and power management functions.
direct rdram ? K4R571669D/k4r881869d page 7 version 1.4 july 2002 figure 3: packet formats ctm/cfm col4 col3 col2 col1 col0 t 8 t 9 t 10 t 11 t 12 t 13 t 14 t 15 t 8 t 9 t 10 t 11 t 0 t 1 t 2 t 3 t 0 t 1 t 2 t 3 s=1 a ma7 ma5 ma3 ma1 m=1 ma6 ma4 ma2 ma0 mb7 mb4 mb1 mb6 mb3 mb0 mb5 mb2 r2 ctm/cfm row2 dr4t dr2 br0 br3 rsvr r8 r5 row1 dr4f dr1 br1 br4 rsvr r7 r4 r1 row0 dr3 dr0 br2 rsvb av = 1 r6 r3 r0 act a0 prex d0 msk (b1) prer c0 wr b1 c4 ctm/cfm col4 dc4 s=1 c6 col3 dc3 c5 c3 col2 dc2 cop1 rsvb bc2 c2 dc1 cop0 bc4 bc1 c1 dc0 cop2 cop3 bc3 bc0 c0 col1 col0 ctm/cfm row2 row1 row0 ctm/cfm col4 col3 col2 col1 col0 rop2 dr4t dr2 br0 br3 rop10 rop8 rop5 dr4f dr1 br1 br4 rop9 rop7 rop4 rop1 dr3 dr0 br2 rsvb av = 0 rop6 rop3 rop0 s=1 b dx4 xop4 rsvb bx1 m=0 dx3 xop3 bx4 bx0 dx2 xop2 bx3 dx1 xop1 bx2 dx0 xop0 t 0 t 4 t 8 t 12 t 1 t 5 t 9 t 13 t 2 t 6 t 10 t 14 t 3 t 7 t 11 t 15 rowa packet colm packet colc packet colx packet rowr packet ctm/cfm dqa8..0 dqb8..0 col4 ..col0 row2 ..row0 t packet a the colm is associated with a previous colc, and is aligned with the present colc, indicated by the start bit (s=1) position. b the colx is aligned with the present colc, indicated by the start bit (s=1) position.
direct rdram ? K4R571669D/k4r881869d page 8 version 1.4 july 2002 field encoding summary table 5 shows how the six devi ce address bits are decoded for the rowa and rowr packets. the dr4t and dr4f encoding merges a fifth device bit with a framing bit. when neither bit is a sserted, the device is not selected. note that a broadcast operation is indicated when both bits are set. broadcast operation w ould typically be us ed for refresh and power management commands. if the device is selected, the dm (devicematch) signal is asserted and an act or rop command is performed. table 6 shows the encodings of the remaining fields of the rowa and rowr packets. an rowa packet is specified by asserting the av bit. this ca uses the specified row of the specified bank of this device to be loaded into the associated sense amps. an rowr packet is specified when av is not asserted. an 11 bit opcode field encodes a command for one of the banks of this device. the prer co mmand causes a bank and its two associated sense amps to precharge, so another row or an adjacent bank may be activa ted. the refa (refresh-acti- vate) command is similar to the act command, except the row address comes from an internal register refr, and refr is incremented at the largest bank address. the refp (refresh-precharge) command is identical to a prer command. the napr, naprc, pdnr, attn, and rlxr commands are used for managing the power dissipation of the rdram device and are descri bed in more detail in ? power state management ? on page 50. the tcen and tcal commands are used to adjust the output dr iver slew rate and they are described in more detail in ? current and temperature control ? on page 56. table 5: device field encodings for rowa packet and rowr packet dr4t dr4f device selection device match signal (dm) 1 1 all devices (broadcast) dm is set to 1 0 1 one device selected dm is set to 1 if {devid4 ..devid0} == {0,dr3..dr0} else dm is set to 0 1 0 one device selected dm is set to 1 if {devid4 ..devid0} == {1,dr3..dr0} else dm is set to 0 0 0 no packet present dm is set to 0 table 6: rowa packet and rowr packet field encodings dm a av rop10..rop0 field name command description 1098765432:0 0 - ------------ no operation. 1 1 row address act activate row r8..r0 of bank br4..br0 of device and move device to attn b . 10 1 1000x c x x 000 prer precharge bank br4..br0 of this device. 1 0 000 1 100x000refa refresh (activate) row refr 8..refr0 of bank br4..br0 of device. increment refr if br4..br0 = 11111 (see figure 52). 10 10 10 100x000refp precharge bank br 4..br0 of this device after refa (see figure 52). 1 0 xx000 0 1 x 000 pdnr move this device into the powerdown (pdn) power state (see figure 49). 1 0 xx000 1 0 x 000 napr move this device into the nap (nap) power state (see figure 49). 1 0 xx000 1 1 x 000 naprc move this device into the nap (nap) power state conditionally 1 0 xxxxxxx 0 000 attn b move this device into the attention (attn) power state (see figure 47). 1 0 xxxxxxx 1 000 rlxr move this device into the standby (stby) power state (see figure 48). 1 0 0000000x 001 tcal temperature calibrate this device (see figure 55). 1 0 0000000x 010 tcen temperature calibrate/enable this device (see figure 55). 1 0 00000000000noropno operation. a. the dm (device match signal) value is determined by the dr4t,dr4f, dr3..dr0 field of the rowa and rowr packets. see table 5. b. the attn command does not cause a rlx-to-attn transition for a broadcast operation (dr4t/dr4f=1/1). c. an ? x ? entry indicates which commands may be combined. for instance, the three commands prer/naprc/rlxr may be specified in one rop v alue (011000111000).
direct rdram ? K4R571669D/k4r881869d page 9 version 1.4 july 2002 table 7 shows the cop field en coding. the device must be in the attn power state in order to receive colc packets. the colc packet is used prima rily to specify rd (read) and wr (write) commands. retire operations (moving data from the write buffer to a sense amp) happen automatically. see figure 18 for a more detailed description. the colc packet can also specify a prec command, which precharges a bank and it s associated sense amps. the rda/wra commands are equiva lent to combining rd/wr with a prec. rlxc (relax) performs a power mode transi- tion. see ? power state management ? on page 50. table 8 shows the colm and colx field encodings. the m bit is asserted to specify a colm packet with two 8 bit bytemask fields ma and mb. if th e m bit is not asserted, an colx is specified. it has de vice and bank a ddress fields, and an opcode field. the primary use of the colx packet is to permit an independent prex (precharge) command to be specified without consuming control bandwidth on the row pins. it is also used for th e cal(calibrate) and sam (sam- ple) current control commands (see ? current and tempera- ture control ? on page 56), and for the rlxx power mode command (see ? power state management ? on page 50). table 7: colc packet field encodings s dc4.. dc0 (select device) a cop3..0 name command description 0 ---- ----- - no operation. 1 /= (devid4 ..0) ----- - retire write buffer of this device. 1 == (devid4 ..0) x000 b nocop retire write buffer of this device. 1 == (devid4 ..0) x001 wr retire write buffer of this device, then write column c6..c0 of bank bc4..bc0 to write buffer. 1 == (devid4 ..0) x010 rsrv reserved, no operation. 1 == (devid4 ..0) x011 rd read column c6..c0 of bank bc4..bc0 of this device. 1 == (devid4 ..0) x100 prec retire write buffer of this device, then precharge bank bc4..bc0 (see figure 15). 1 == (devid4 ..0) x101 wra same as wr, but precharge bank bc4..bc0 after write buffer (with new data) is retired. 1 == (devid4 ..0) x110 rsrv reserved, no operation. 1 == (devid4 ..0) x111 rda same as rd, but precharge bank bc4..bc0 afterward. 1 == (devid4 ..0) 1xxx rlxc move this device into the standby (stby) power state (see figure 48). a. ? /= ? means not equal, ? == ? means equal. b. an ? x ? entry indicates which commands may be combined. for instance, the two commands wr/rlxc may be specified in one cop value (1001 ). table 8: colm packet and colx packet field encodings m dx4 .. dx0 (selects device) xop4..0 name command description 1 ---- - msk mb/ma bytemasks used by wr/wra. 0 /= (devid4 ..0) - - no operation. 0 == (devid4 ..0) 00000 noxop no operation. 0 == (devid4 ..0) 1xxx0 a prex precharge bank bx3..bx0 of this device (see figure 15). 0 == (devid4 ..0) x10x0 cal calibrate (drive) i ol current for this device (see figure 54). 0 == (devid4 ..0) x11x0 cal/sam calibrate (drive) and sample ( update) i ol current for this device (see figure 54). 0 == (devid4 ..0) xxx10 rlxx move this device into the standby (stby) power state (see figure 48). 0 == (devid4 ..0) xxxx1 rsrv reserved, no operation. a. an ? x ? entry indicates which commands may be combined. for instance, the two commands prex/rlxx may be specified in one xop value (10 010).
direct rdram ? K4R571669D/k4r881869d page 10 version 1.4 july 2002 electrical conditions table 9: electrical conditions symbol parameter and conditions min max unit t j junction temperature under bias - 100 c v dd, v dda supply voltage 2.50 - 0.13 2.50 + 0.13 v v dd,n, v dda,n supply voltage droop (dc) during nap interval (t nlimit ) - 2.0 % v dd,n, v dda,n supply voltage ripple (ac) during nap interval (t nlimit ) -2.0 2.0 % v cmos a supply voltage for cmos pins (2.5v controllers) supply voltage for cmos pins (1.8v controllers) v dd 1.80 - 0.1 v dd 1.80 + 0.2 v v v ref reference voltage 1.40 - 0.2 1.40 + 0.2 v v dil rsl data input - low voltage @ t cycle =1.875ns v ref - 0.5 v ref - 0.15 v rsl data input - low voltage @ t cycle =2.50ns v ref - 0.5 v ref - 0.2 v dih rsl data input - high voltage b @ t cycle =1.875ns v ref + 0.15 v ref + 0.5 v rsl data input - high voltage b @ t cycle =2.50ns v ref + 0.2 v ref + 0.5 r da rsl data asymmetry : r da = (v dih - v ref ) / (v ref - v dil ) 0.67 1.00 - v cm rsl clock input - common mode v cm = (v cih +v cil) /2 1.3 1.8 v v cis,ctm rsl clock input swing: v cis = v cih - v cil (ctm,ctmn pins). 0.35 1.00 v v cis,cfm rsl clock input swing: v cis = v cih - v cil (cfm,cfmn pins). 0.225 1.00 v v il,cmos cmos input low voltage - 0.3 c v cmos /2 - 0.25 v v ih,cmos cmos input high voltage v cmos /2 + 0.25 v cmos +0.3 d v a. v cmos must remain on as long as v dd is applied and cannot be turned off. b. v dih is typically equal to v term (1.8v 0.1v) under dc conditions in a system. c. voltage undershoot is limited to -0.7v for a duration of less than 5ns. d. voltage overshoot is limited tov cmos +0.7v for a duration of less than 5ns
direct rdram ? K4R571669D/k4r881869d page 11 version 1.4 july 2002 electrical characteristics table 10: electric al characteristics symbol parameter and conditions min max unit jc junction-to-case thermal resistance - 0.5 c/watt i ref v ref current @ v ref,max -10 10 a i oh rsl output high current @ (0 v out v dd ) -10 10 a i all rsl i ol current @ t cycle = 1.875ns v ol = 0.9v, v dd,min , t j,max a 32.0 90.0 ma rsl i ol current @ t cycle = 2.50ns v ol = 0.9v, v dd,min , t j,max a a. this measurement is made in manual current contro l mode; i.e. with all output device legs sinking current. 30.0 90.0 ? i ol rsl i ol current resolution step - 1.5 ma r out dynamic output impedance @ v ol = 0.9v 150 - ? i ol,nom rsl i ol current @ v ol = 1.0v b,c @ t cycle =1.875ns b. this measurement is made in automatic current control mode after at least 64 current control calibration operations to a dev ice and after cca and ccb are initialized to a value of 64. this value applies to all dqa and dqb pins. c. this measurement is made in automatic current control mode in a 25 ? test system with v term = 1.714v and v ref = 1.357v and with the asyma and asymb register fields set to 0. 27.1 30.1 ma rsl i ol current @ v ol = 1.0v b,c @ t cycle =2.50ns 26.6 30.6 i i,cmos cmos input leakage current @ (0 v i,cmos v cmos ) -10.0 10.0 a v ol,cmos cmos output voltage @ i ol,cmos = 1.0ma - 0.3 v v oh,cmos cmos output high voltage @ i oh,cmos = -0.25ma v cmos -0.3 - v
direct rdram ? K4R571669D/k4r881869d page 12 version 1.4 july 2002 timing conditions table 11: timing conditions symbol parameter min max unit figure(s) t cycle ctm and cfm cycle times (-1066) 1.875 2.5 ns figure 56 ctm and cfm cycle times (-800) 2.50 3.33 t cr , t cf ctm and cfm input rise and fall times. use the minimum value of these parameters during testing. 0.2 0.5 ns figure 56 t ch , t cl ctm and cfm high and low times 40% 60% t cycle figure 56 t tr ctm-cfm differential (mse/ms=0/0) ctm-cfm differential (mse/ms=1/1) a ctm-cfm differential only for 1.875ns (mse/ms=1/0) 0.0 0.9 -0.1 1.0 1.0 0.1 t cycle figure 43 figure 56 t dcw domain crossing window -0.1 0.1 t cycle figure 62 t dr , t df dqa/dqb/row/col input rise/fall times (20% to 80%). use the minimum value of these parameters during testing. 0.2 0.45 ns figure 57 t s , t h dqa/dqb/row/col-to-cfm set/hold @ t cycle =1.875ns 0.160 b - ns figure 57 dqa/dqb/row/col-to-cfm set/hold @ t cycle =2.50ns 0.200 b.c - t dr1, t df1 sio0, sio1 input rise and fall times - 5.0 ns figure 59 t dr2, t df2 cmd, sck input rise and fall times - 2.0 ns figure 59 t cycle1 sck cycle time - serial control register transactions 1000 - ns figure 59 sck cycle time - power transitions @ t cycle =1.875ns 7.5 - sck cycle time - power transitions @ t cycle =2.50ns 10 - t ch1 , t cl1 sck high and low times @ t cycle =1.875ns 3.5 - ns figure 59 sck high and low times @ t cycle =2.50ns 4.25 - t s1 cmd setup time to sck rising or falling edge d @ t cycle =1.875ns 1.0 - ns figure 59 cmd setup time to sck rising or falling edge d @ t cycle =2.50ns 1.25 - t h1 cmd hold time to sck rising or falling edge d 1 - ns figure 59 t s2 sio0 setup time to sck falling edge 40 - ns figure 59 t h2 sio0 hold time to sck falling edge 40 - ns figure 59 t s3 pdev setup time on dqa5..0 to sck rising edge. 0 - ns figure 50 t h3 pdev hold time on dqa5..0 to sck rising edge. 5.5 - ns figure 60 t s4 row2..0, col4..0 setup time for quiet window -1 - t cycle figure 50 t h4 row2..0, col4..0 hold time for quiet window e 5-t cycle figure 50 t npq quiet on row/col bits during nap/pdn entry 4 - t cycle figure 49 t readtocc offset between read data and cc packets (same device) 12 - t cycle figure 54 t ccsamtoread offset between cc packet and read data (same device) 8 - t cycle figure 54 t ce ctm/cfm stable before nap/pdn exit 2 - t cycle figure 50
direct rdram ? K4R571669D/k4r881869d page 13 version 1.4 july 2002 t cd ctm/cfm stable after nap/pdn entry 100 - t cycle figure 49 t frm row packet to col packet attn framing delay 7 - t cycle figure 48 t nlimit maximum time in nap mode 10.0 s figure 47 t ref refresh interval 32 ms figure 52 t burst interval after pdn or nap (with self-refresh) exit in which all banks of the rdram device must be refreshed at least once. 200 s figure 53 t cctrl current control interval 34 t cycle 100ms ms/t cycle figure 54 t temp temperature control interval 100 ms figure 55 t tcen tce command to tcal command 150 - t cycle figure 55 t tcal tcal command to quiet window 2 2 t cycle figure 55 t tcquiet quiet window (no read data) 140 - t cycle figure 55 t pa use rdram device delay (no rsl operations allowed) 200.0 s page 38 a. mse/ms are fields of the skip register. for this combinati on (skip override) the tdcw parameter range is effectively 0.0 to 0.0. b. t s,min and t h,min for other t cycle values can be interpolated between or extr apolated from the timings at the 2 specified t cycle values. c. this parameter also applies to a-1066 part when operated with t cycle = 2.50ns d. with v il,cmos =0.5v cmos -0.4v and v ih,cmos =0.5v cmos +0.4v e. effective hold becomes t h4 ?=t h4 +[pdnxa ? 64 ? t scycle +t pdnxb,max ]-[pdnx ? 256 ? t scycle ] if [pdnx ? 256 ? t scycle ] < [pdnxa ? 64 ? t scycle +t pdnxb,max ]. see figure 50. table 11: timing conditions symbol parameter min max unit figure(s)
direct rdram ? K4R571669D/k4r881869d page 14 version 1.4 july 2002 timing characteristics table 12: timing characteristics symbol parameter min max unit figure(s) t q ctm-to-dqa/dqb output time @ t cycle =1.875ns -0.195 a a. t q,min and t q,max for other t cycle values can be interpolated between or extrapolated from the timings at the 3 specified t cycle values. b.this parameter also applies to a-1066 part when operated with t cycle = 2.50ns +0.195 a ns figure 58 ctm-to-dqa/dqb output time @ t cycle =2.5ns -0.260 a,b +0.260 a,b t qr , t qf dqa/dqb output rise and fall times @ t cycle =1.875ns 0.2 0.32 ns figure 58 dqa/dqb output rise and fall times @ t cycle =2.5ns 0.2 0.45 t q1 sck(neg)-to-sio0 delay @ c load,max = 20pf (sd read data valid). - 10 ns figure 61 t hr sck(pos)-to-sio0 delay @ c load,max = 20pf (sd read data hold). 2 - ns figure 61 t qr1 , t qf1 sio out rise/fall @ c load,max = 20pf - 12 ns figure 61 t prop1 sio0-to-sio1 or sio1-to-sio0 delay @ c load,max = 20pf - 20 ns figure 61 t napxa nap exit delay - phase a - 50 ns figure 50 t napxb nap exit delay - phase b - 40 ns figure 50 t pdnxa pdn exit delay - phase a - 4 s figure 50 t pdnxb pdn exit delay - phase b - 9000 t cycle figure 50 t as attn-to-stby power state delay - 1 t cycle figure 48 t sa stby-to-attn power state delay - 0 t cycle figure 48 t asn attn/stby-to-nap power state delay - 8 t cycle figure 49 t asp attn/stby-to-pdn power state delay - 8 t cycle figure 49
direct rdram ? K4R571669D/k4r881869d page 15 version 1.4 july 2002 timing parameters table 13: timing parameter summary parameter description min -32p -1066 min -32 -1066 min -35 -1066 min -40 -800 min -45 -800 max units figure(s) t rc row cycle time of rdram banks -the interval between rowa pack- ets with act commands to the same bank. 28 28 32 28 28 - t cycle figure 16 figure 17 t ras ras-asserted time of rdram bank - the interval between rowa packet with act command and next rowr packet with prer a com- mand to the same bank. 20 20 22 20 20 64 s b t cycle figure 16 figure 17 t rp row precharge time of rdram banks - the interval between rowr packet with prer a command and next rowa packet with act com- mand to the same bank. 881088 - t cycle figure 16 figure 17 t pp precharge-to-precharge time of rdram device - the interval between successive rowr packets with prer a commands to any banks of the same device. 88888 - t cycle figure 13 t rr ras-to-ras time of rdram device - the interval between successive rowa packets with act commands to any banks of the same device. 88888 - t cycle figure 14 t rcd ras-to-cas delay - the interval from rowa packet with act com- mand to colc packet with rd or wr command). note - the ras-to- cas delay seen by the rdram core (t rcd-c ) is equal to t rcd-c = 1 + t rcd because of differences in the row and column paths through the rdram interface. 99979 - t cycle figure 16 figure 17 t cac cas access delay - the interval from rd command to q read data. the equation for t cac is given in the tparm register in figure 40. 89988 12 t cycle figure 5 figure 40 t cwd cas write delay (interval from wr command to d write data. 6 6 6 6 6 6 t cycle figure 5 t cc cas-to-cas time of rdram bank - the interval between successive colc commands). 44444 - t cycle figure 16 figure 17 t pa ck et length of rowa, rowr, colc, colm or colx packet. 4 4 4 4 4 4 t cycle figure 3 t rtr interval from colc packet with wr command to colc packet which causes retire, and to colm packet with bytemask. 88888 - t cycle figure 18 t offp the interval (offset) from colc packet with rda command, or from colc packet with retire command (after wra automatic precharge), or from colc packet with prec command, or from colx packet with prex command to the equivalent rowr packet with prer. the equation for t offp is given in the tparm register in figure 40. 44444 4 t cycle figure 15 figure 40 t rdp interval from last colc packet with rd command to rowr packet with prer. 44444 - t cycle figure 16 t rtp interval from last colc packet with automatic retire command to rowr packet with prer. 44444 - t cycle figure 17 a. or equivalent prec or prex command. see figure 15. b. this is a constraint imposed by the core, and is therefore in units of s rather than t cycle .
direct rdram ? K4R571669D/k4r881869d page 16 version 1.4 july 2002 absolute maximum ratings note*) component : refer to t j, jc rimm: refre to t plate, max i dd - supply current profile table 14: absolute maximum ratings symbol parameter min max unit v i,abs voltage applied to any rsl or cmos pin with respect to gnd - 0.3 v dd +0.3 v v dd,abs , v dda,abs voltage on vdd and vdda with respect to gnd - 0.5 v dd +1.0 v t store storage temperature - 50 100 c t min minimum operation temperature 0 note* c table 15: supply current profile i dd value rdram power state and st eady-state transaction rates a min max (1066mhz, - 32p/-32/-35) max (800mhz, -40/-45) unit i dd,pdn device in pdn, self-refresh enabled and init.lsr=0. - 6000 6000 a i dd,nap device in nap. - 4 4 ma i dd,stby device in stby. this is the average for a device in stby with (1) no packets on the channel, and (2) with packets sent to other devices. - 100 80 ma i dd,refresh device in stby and refreshing rows at the t ref,max period. - 100 80 ma i dd,attn device in attn. this is the average for a device in attn with (1) no packets on the channel, and (2) with packets sent to other devices. - 150 120 ma i dd,attn-w device in attn. act command every 8?t cycle , pre command every 8?t cycle , wr command every 4 ? t cycle , and data is 1100..1100 - 790(x18) b 730(x16) 620(x18) 575(x16) ma i dd,attn-r device in attn. act command every 8?t cycle , pre command every 8 ? t cycle , rd command every 4 ? t cycle , and data is 1111..1111 c - 700(x18) 650(x16) 560(x18) 530(x16) ma a. cmos interface consumes power in all power states. b. x18/x16 rdram data width. c. this does not include the i ol sink current. the rdram dissipates i ol ? v ol in each output driver when a logic one is driven. table 16: supply current at initialization symbol parameter allowed range of t cycle v dd min max unit i dd,pwrup,d i dd from power -on to setr 1.875ns to 2.5ns v dd,min - 200 a ma i dd,setr,d i dd from setr to clrr 1.875ns to 2.5ns v dd,min - 332 ma a. the supply current will be 150ma when t cycle is in the range 15ns to 1000ns.
direct rdram ? K4R571669D/k4r881869d page 17 version 1.4 july 2002 capacitance and inductance table 17: rsl pin parasitics symbol parameter and condition s - rsl pins min max unit figure l i rsl effective i nput inductance @ t cycle =1.875ns -3.5 nh figure 63 rsl effective i nput inductance @ t cycle =2.5ns -4.0 l 12 mutual inductan ce between any dqa or dqb rsl signals. - 0.2 nh figure 63 mutual inductan ce between any row or col rsl signals. - 0.6 nh ? l i difference in l i value between any rsl pins of a single device. - 1.8 nh figure 63 c i rsl effective input capacitance a @ t cycle =1.875ns 2.0 2.3 pf figure 63 rsl effective input capacitance a @ t cycle =2.5ns 2.0 2.4 c 12 mutual capacitance be tween any rsl signals. - 0.1 pf figure 63 ? c i difference in c i value between aver age of {ctm, ctmn, cfm, cfmn} and any rsl pins of a single device. - 0.06 pf figure 63 r i rsl effective i nput resistance @ t cycle =1.875ns 410 ? figure 63 rsl effective i nput resistance @ t cycle =2.5ns 415 a. this value is a combination of the device io circuitry and package capacitances table 18: cmos pin parasitics symbol parameter and conditions - cmos pins min max unit figure l i ,cmos cmos effective inpu t inductance 8.0 nh figure 63 c i ,cmos cmos effective input ca pacitance (sck,cmd) a 1.7 2.1 pf c i ,cmos,sio cmos effective input capacitance (sio1, sio0) a -7.0pf a. this value is a combination of the device io circuitry and package capacitances.
direct rdram ? K4R571669D/k4r881869d page 18 version 1.4 july 2002 center-bonded wbga package (92balls) figure 4 shows the form and dimensions of the recom- mended package for the 92balls center-bonded wbga device class. figure 4: center-bonded wbga package table lists the numer ical values corresponding to dimen- sions shown in figure 4. ab cde fgh j 1 2 3 4 5 6 7 d a e1 d e e1 8 e2 bottom 9 10 klmnprstu bottom top bottom table 19: center-bonded wbga package dimensions symbol parameter min. max . unit e1 ball pitch (x-axis) 0.80 0.80 mm e2 ball pitch (y-axis) 0.80 0.80 mm a package body length 9.2 9.4 mm d package body width 15.0 15.2 mm e package total thickness 0.98 1.08 mm e1 ball height 0.30 0.40 mm d ball diameter 0.40 0.50 mm

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